hae hihia

Nūhou ʻOihana: Ua hoʻokumu ʻo PVA TePla lāua ʻo Fraunhofer IISB i ka Joint Lab no nā substrates alumini nitride

Nūhou ʻOihana: Ua hoʻokumu ʻo PVA TePla lāua ʻo Fraunhofer IISB i ka Joint Lab no nā substrates alumini nitride

Nūhou ʻOihana Hana pū ʻo Keysight lāua ʻo WIN e hōʻemi i ka pilikia hoʻolālā no nā ʻāpana RF alapine kiʻekiʻe

ʻO Fraunhofer IISB (Institute for Integrated Systems and Device Technology) ma Erlangen a me ka mea hana ʻōnaehana microwave & radio frequency plasma ma Wettenberg ʻo PVA TePla AG e hōʻuluʻulu nei i ko lākou ʻike loea i loko o kahi Joint Lab no ka hana ʻana i nā kristal alumini nitride (AlN).

Ma ke ʻano he mea mua ma ʻEulopa, hiki i kēia hui pū ʻana ke hana i nā ʻano hana liʻiliʻi o nā substrates AlN monocrystalline me ke anawaena o 2-ʻīniha no nā kumu R&D i kākoʻo ʻia e ka ʻoihana. Hoʻomaikaʻi nui kēia i ka loaʻa ʻana o nā substrates AlN ma ʻEulopa, kahi e hoʻolalelale ai i ka hoʻomohala ʻana o nā polokalamu a me nā ʻōnaehana e pili ana iā AlN a me ko lākou hoʻololi ʻana i nā noi ʻoihana.

ʻO ka aluminium nitride kekahi o nā mea hoʻohiki nui loa no ka hanauna hou o nā mea uila hana kiʻekiʻe. Ma ke ʻano he semiconductor ultrawide-bandgap (UWBG), wehe ʻo AlN i nā mea hiki hou i nā photonics, nā mea uila mana, nā mea uila alapine kiʻekiʻe, a me nā mea uila e hana ana ma lalo o nā kūlana koʻikoʻi. A hiki i kēia lā, ʻo ka nele o nā substrates AlN kiʻekiʻe, wahi nui a me ke kumukūʻai kūpono ke kāohi nei i ka hoʻomohala ʻana o nā ʻōnaehana uila e pili ana iā AlN.

"Me ka Joint Lab, ke kau nei mākou i ke kahua e hōʻoia i ka lako pono o nā substrates AlN mai ʻEulopa mai, no laila e wehe ana i nā manaʻolana hou no ka hanauna hou o nā mea hana AlN hana kiʻekiʻe," wahi a Kauka Sven Besendörfer, alakaʻi hui no nā mea nitride a kuleana no ka hoʻomohala ʻana i nā mea AlN ma Fraunhofer IISB. "Me PVA TePla, ke hāʻawi nei mākou i ko mākou ʻike loea i ka ulu ʻana o ka kristal ʻoihana, no laila e hana ana i nā mea mua no ka hoʻoili ʻana i nā noi sima."

Hoʻohui ka ʻenehana lako i hōʻoia ʻia i ka ʻike hana ponoʻī

Ma ka hale hana hui, ke hoʻohana nei ʻo Fraunhofer IISB i kāna ʻenehana hana PVT (physical vapor transport) ponoʻī e hana i nā kristal nui AlN 2-'īniha. Ma kēia kaʻina hana, ua hoʻomāhu ʻia ka pauka AlN i loko o kahi ipu hoʻoheheʻe ma nā mahana ma luna o 2000°C a waiho ʻia ma luna o kahi kristal hua. Hāʻawi ʻo PVA TePla i nā ʻōnaehana PVT no kēia kumu, kahi i hoʻohana mua ʻia ma ka honua holoʻokoʻa no nā kristal silicon carbide (SiC) 8-'īniha ke anawaena a ua hoʻololi kūikawā ʻia no ka ulu ʻana o nā kristal AlN 2-'īniha.

Ma muli o ke akamai o ke kaʻina hana i hāʻawi ʻia e Fraunhofer IISB, ua hiki koke i ka hui PVA TePla ke hana i nā kristal AlN o ke ʻano like ma kāna mau hale ponoʻī. Ke nānā nei ka Joint Lab i ka hana liʻiliʻi paʻa o nā kristal AlN 2-'īniha. Ke hoʻonui mālie ʻia nei ka hana ʻana e hoʻomaikaʻi pono i ke kūpaʻa o ke kaʻina hana, ka hana hou ʻana, ka hua a me nā ʻano kumukūʻai.

"Me ka alumini nitride, ke hoʻokumu ikaika nei mākou i ka hanauna hou o ka ʻenehana ma hope o SiC," wahi a Kauka Jan Pfeiffer, hope pelekikena o R&D ma PVA TePla. "Ma o ka Joint Lab, hiki iā mākou ke hoʻohui pololei i kā mākou ʻike lako me ka ʻike hana o Fraunhofer IISB, e hiki ai iā mākou ke hāʻawi i nā hopena i hoʻonohonoho ʻia i ka mākeke i kā mākou mea kūʻai aku honua i ka wā mua," wahi āna. "ʻO kā mākou pahuhopu like ka hoʻoulu ʻana i ka hoʻomohala mākeke ma ka ʻāpana AlN ma o nā substrates kūpono a e kākoʻo i nā ʻoihana e ʻimi nei e komo i kēia kahua ma ke ʻano he mau hoa hana ʻenehana me nā lako kūpono a me ka ʻike hana like."

Ke hoʻoikaika nei i ke kūʻokoʻa ʻenehana ʻEulopa ma o ka hoʻonui ʻana i ka ʻoihana

Hoʻoponopono hou ʻia nā kristal AlN i hana ʻia ma ka Joint Lab ma Fraunhofer IISB i loko o nā substrates AlN epi-ready a, ma o ka ʻoihana noiʻi a me ka hoʻomohala huahana ma Erlangen ʻo LZE GmbH, ua hoʻoili kūikawā ʻia i loko o ka hoʻomohala ʻoihana a me nā kaʻina hana scaling. "No ke kūʻokoʻa semiconductor o ʻEulopa, he mea nui ia ʻaʻole i hoʻomohala wale ʻia nā mea koʻikoʻi hou akā ua hoʻoili koke ʻia i loko o nā noi ʻoihana a me ka hoʻokumu waiwai scalable," wahi a ka luna hoʻokele o LZE ʻo Dr Christian Forster. "Me kāna mākeke no nā ʻenehana ʻoi loa, hāʻawi ʻo LZE GmbH i nā ʻoihana a me nā ʻoihana noiʻi me ke komo kū hoʻokahi a wehe ʻia i nā substrates AlN. Ma kēia ʻano, kōkua mākou e hōʻoia i ka lawe ʻia ʻana o nā noi hoʻohiki no nā mākeke ʻoihana kiʻekiʻe i ka mākeke me ka wikiwiki."


Ka manawa hoʻouna: Iulai-20-2026