Nūhou ʻOihana: ʻO ka ʻenehana IVWorks'reGaN e hiki ai i ka 742GHz GaN HEMT mua

Kiʻi: Hoʻoponopono kahi ʻenekinia IVWorks i kahi kumu plasma no ka hoʻolaha ʻana i loko o kahi ʻōnaehana Hybrid MBE pae hana, e kākoʻo ana i ka ulu ʻana o ka epitaxial GaN kiʻekiʻe a me ke ʻano kiʻekiʻe.

Ua lilo kahi transistor kiʻekiʻe-electron-mobility gallium nitride (GaN) (HEMT) e hoʻokomo ana i ka ʻenehana regrowth koho reGaN ponoʻī o IVWorks Co Ltd o Daejeon, Kōlea Hema i ka transistor GaN mua loa o ka honua e hoʻokō i ka alapine oscillation kiʻekiʻe loa (f_{ka nui loa}) e ʻoi aku ana ma mua o 700GHz. Ua hōʻike ʻia kēia ma o kahi hāmeʻa 45nm GaN HEMT i hoʻomohala ʻia e ka hui noiʻi a polopeka Dae-hyun Kim ma ke Kula o Electronics Engineering ma ke Kulanui ʻo Kyungpook National a ua hōʻike ʻia ma ka lā 18 o Iune ma ka 2026 IEEE/JSAP Symposium ma VLSI Technology & Circuits ma Honolulu, Hawaiʻi, USA.

Ua hana ka hui noiʻi i kahi transistor GaN me ka lōʻihi o ka puka 45nm a ua hoʻokō i kahi moʻolelo f_{ka nui loa}o 742GHz, e hoʻokumu ana i kahi pae hoʻohālikelike hou no ka hana RF ma ka ʻenehana transistor GaN. Ua hoʻokō pū ka hāmeʻa i kahi metric alapine awelika moʻolelo (favg) o 497GHz, ʻo ia ka waiwai kiʻekiʻe loa i hōʻike ʻia a hiki i kēia lā no kekahi ʻenehana transistor GaN. Hōʻike kēia mau hopena he lawa ka hoʻokūkū hana o nā semiconductors GaN ʻoiai ma ke ʻano alapine ultra-kiʻekiʻe a hiki ke lawelawe ma ke ʻano he kahua kūpono no nā ʻōnaehana uila sub-terahertz a me terahertz e hiki mai ana, wahi a IVWorks.

ʻOiai ua lōʻihi ka noho aliʻi ʻana o nā transistors e pili ana i ka indium phosphide (InP) i ke ʻano alapine sub-terahertz ma muli o ko lākou mau waiwai lawe electron kūikawā, ʻo ko lākou voltage breakdown haʻahaʻa e kaupalena ana i ka mana hoʻopuka a me ka scalability ʻōnaehana. I ka hoʻohālikelike ʻana, hāʻawi ʻo GaN i kahi hui kūikawā o ke kahua uila breakdown kiʻekiʻe, ka nui o ka mana kiʻekiʻe, a me ka paʻa wela maikaʻi loa, e hoʻolilo ana iā lākou i mau moho hoihoi no nā noi alapine kiʻekiʻe a me ka mana kiʻekiʻe o ka hanauna e hiki mai ana. Eia nō naʻe, ʻo ka hoʻokō ʻana i ka hana alapine ultra-kiʻekiʻe me GaN ua mau nō ia he pilikia nui. No ka lanakila ʻana i kēia mau palena, ua hoʻohana ka hui noiʻi i kahi kaʻina hana puka 45nm holomua a me ka hoʻolālā hāmeʻa i hoʻomaikaʻi ʻia e hoʻonui i ka hana alapine kiʻekiʻe.

ʻO kahi mea nui i hiki ai ke hoʻohana ʻia ʻo ka ʻenehana hoʻoulu hou koho ponoʻī a IVWorks ʻo reGaN. Hoʻomohala wale ʻia e IVWorks, hoʻoulu hou koho ʻo reGaN i ka GaN ʻano-n i hoʻohui nui ʻia ma nā wahi kumu a me nā wahi hoʻokahe, e hōʻemi nui ana i ke kū'ē ʻana o ka pili. Ma ke ʻano he hoa noiʻi like i kēia haʻawina, ua hōʻike ʻo IVWorks i ka mea i ʻōlelo ʻia he ʻano like maikaʻi loa ma ka wafer 4-'īniha holoʻokoʻa a ua hoʻokō i ka hana hou ʻana. Eia kekahi, ua hoʻemi ka hui i ke kū'ē ʻana o ka interface regrowth (R_int) a i 0.027Ω-mm, e hoʻokokoke ana i ka palena kumumanaʻo i hiki ke hoʻokō ʻia ma ka nui o ka mea lawe like.

"Ke hoʻokuke nei kēia noiʻi i nā palena hana RF o GaN HEMTs i kahi pae hou a hōʻike i ka hiki o nā semiconductors GaN no nā noi alapine kiʻekiʻe loa ma o ka hōʻike mua ʻana o ka honua o kahi GaN HEMT me kahi h e ʻoi aku ma mua o 700GHz," wahi a polopeka Dae-hyun Kim. "He mea nui loa ke aʻo ʻana ma ke ʻano he laʻana holomua o ka hui pū ʻana o ka ʻoihana-academia, e hoʻohui ana i ka ulu ʻana o ka epitaxial holomua a me nā ʻenehana regrowth mai ka ʻoihana me ka ʻike loea o ke kulanui i ka noiʻi hāmeʻa a me ke kaapuni," wahi āna.

"Ma muli o kēia hoʻokō, hoʻolālā mākou e hoʻolalelale hou aku i ka hoʻomohala ʻana o nā polokalamu uila GaN hanauna hou e pili ana i nā noi terahertz-frequency no nā kamaʻilio 6G a me nā ʻenehana pale kaua holomua."

Ua ʻōlelo ʻo IVWorks ua hōʻike hou aku ka hoʻokō ʻana i ka ulu ʻana o ka ʻenehana GaN e hoʻonui ma mua o ka RF kuʻuna a me nā mea uila mana i nā noi sub-terahertz a me terahertz e kū mai ana, me nā kamaʻilio 6G, nā ʻōnaehana radar holomua, nā kamaʻilio ukali, a me nā mea uila pale o ka hanauna e hiki mai ana.

"He ʻenehana koʻikoʻi ʻo reGaN i hala mua i ka hōʻoia maikaʻi ma kahi hale hana hao nui a ua hoʻohana ʻia no ka hana nui ʻana," wahi a ka Luna Nui o IVWorks ʻo Young-kyun Noh. "Hōʻike kēia hoʻokō ʻana ʻaʻole wale kā mākou kahua reGaN Hybrid-MBE-based i mākaukau no ka hana ʻana akā he ʻenehana koʻikoʻi hoʻi no nā uila sub-terahertz a me terahertz GaN hanauna hou," wahi āna. "Haʻaheo mākou i ka ʻike ʻana i ka ʻenehana IVWorks e hāʻawi i kahi pae noiʻi alakaʻi honua."